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Ordering number : ENA1367
2SK4197FG
SANYO Semiconductors
DATA SHEET
2SK4197FG
Features
* * * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc *1 IDpack *2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tch=150C Tc=25C (SANYO's ideal heat dissipation condition)*3 PW10s, duty cycle1% Tc=25C (SANYO's ideal heat dissipation condition)*3 Conditions Ratings 600 30 3.5 3.3 13 2.0 28 150 --55 to +150 29 3.3 Unit V V A A A W W C C mJ A
Note : *1 Shows chip capability. *2 Package limited. *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=3.3A *5 L5mH, Single pulse Marking : K4197
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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N2608QB MS IM TC-00001731 No. A1367-1/6
2SK4197FG
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.8A ID=1.8A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=3.5A VDS=200V, VGS=10V, ID=3.5A VDS=200V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V 3 0.8 1.6 2.5 260 50 9.7 12 20 28 12 11 2.6 5.8 0.9 1.2 3.25 Ratings min 600 100 100 5 typ max Unit V A nA V S pF pF pF ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7529-001
4.7 2.54 3.3
10.16 3.18
15.87
6.68
A
15.8
3.23
2.76 1.47 MAX 0.8 1 2 3 12.98
DETAIL-A
(0.84)
0.5
FRAME EMC
( 1.0)
1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG
2.54
2.54
Switching Time Test Circuit
PW=10s D.C.0.5% VDD=200V ID=1.8A RL=111 VGS=10V D G S VOUT
Avalanche Resistance Test Circuit
L 50 RG
10V 0V
2SK4197FG 50 VDD
P.G
RGS=50
2SK4197FG
No. A1367-2/6
2SK4197FG
For this package, a part of inner electrode is exposed. Please refer to the package outline for the detailedstructure. So when mounting the device, please pay enough attention to the isolation with the heatsink. According to the device mounting method, sometimes the insulation voltage may be decreased. (refer to the below insulation characteristics)
Insulation / Ta=25C / RH75%
Parameter Symbol VISO1 Lead & resin insulation * * : AC voltage measurement VISO2 VISO3 Conditions Metal spacer Refer to Fig.1 Washer 5.8mm Refer to Fig.2 Insulated screw, Insulated washer Ratings min typ 1600 2100 3900 max Unit Vrms Vrms Vrms
Fig.1
Fig.2
IT14077
IT14078
Insulation Measuring Diagram
Insulation voltage tester AC / 1 s M3 screw Washer Metal spacer
Operating pin
Washer Lead Al heatsink
Al heatsink
IT14079
No. A1367-3/6
2SK4197FG
8 7
ID -- VDS
Tc=25C
10V
8 7 6 5 4 3 2 1 0
ID -- VGS
VDS=20V
Tc= --25C
25C
75C
Drain Current, ID -- A
5 4 3 2 1 0
8V
VGS=5V
0 5 10 15 20 25
6V
30 IT13709
Drain Current, ID -- A
6
15V
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, VDS -- V
8 7 6 5 4 3 2 1 0
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
8
RDS(on) -- Tc
IT13710
ID=1.8A
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7 6 5 4 3 2 1 0 --50
Tc=75C
25C --25C
VG
=1 S
=1 ID V, 0
.8A
5
6
7
8
9
10
11
12
13
14
15
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
5
| yfs | -- ID
IT13711 3 2 10 7 5 3 2 1.0 7 5
Case Temperature, Tc -- C
IS -- VSD
IT13712
Forward Transfer Admittance, | yfs | -- S
VDS=10V
5C
VGS=0V
3
1.0 7 5 3 2
5C --2 Tc= C 75
Source Current, IS -- A
2
2
0.1 7 5 3 2
0.1 0.1
2
3
5
7
1.0
2
3
5
7
0.01 0.2
0.4
0.6
--25 C
0.8
3 2
Tc=7 5C 25C
1.0
1.2
1.4 IT13714
Drain Current, ID -- A
5 3
SW Time -- ID
IT13713 1000
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD=200V VGS=10V Ciss, Coss, Crss -- pF
7 5 3 2 100 7 5 3 2 10
f=1MHz
Switching Time, SW Time -- ns
2
Ciss
100 7 5 3 2
tf
Coss
td (off)
tr
Crss
10 7 0.1 2 3 5 7
td(on)
1.0 2 3 5 7
7 5
0
10
20
30
40
50 IT13737
Drain Current, ID -- A
IT13715
Drain-to-Source Voltage, VDS -- V
No. A1367-4/6
2SK4197FG
10 9
VGS -- Qg
VDS=200V ID=3.5A Drain Current, ID -- A
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
IDP=13A IDC=3.5A IDpack=3.3A PW10s
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 IT13717
10
1m s 10 m D C 100 s op ms er at io n
10 0 s s
Operation in this area is limited by RDS(on). Tc=25C Single pulse
23 5 7 1.0 23 5 7 10 23 5 7 100 23
0.01 0.1
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Drain-to-Source Voltage, VDS -- V
30
PD -- Tc
5 71000 IT14236
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
28 25
2.0
20
1.5
15
1.0
10
0.5
5
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
120
EAS -- Ta
IT13719
Case Temperature, Tc -- C
IT13720
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175 IT10478
Ambient Temperature, Ta -- C
No. A1367-5/6
2SK4197FG
Note on usage : Since the 2SK4197FG is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice.
PS No. A1367-6/6

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